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  bc546xbk ... BC549XBK bc546xbk ... BC549XBK npn general purpose si-epitaxial planar transistors si-epitaxial planar-transistoren fr universellen einsatz npn version 2009-12-03 dimensions - ma?e [mm] power dissipation C verlustleistung 500 mw plastic case kunststoffgeh?use to-92 (10d3) weight approx. C gewicht ca. 0.18 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert special packaging bulk sonder-lieferform schttgut maximum ratings (t a = 25c) grenzwerte (t a = 25c) bc546 bc547 bc548/549 collector-emitter-voltage e-b short v ces 85 v 50 v 30 v collector-emitter-voltage b open v ceo 65 v 45 v 30 v collector-base-voltage e open v cbo 80 v 50 v 30 v emitter-base-voltage c open v eb0 5 v power dissipation C verlustleistung p tot 500 mw 1 ) collector current C kollektorstrom (dc) i c 100 ma peak collector current C kollektor-spitzenstrom i cm 200 ma peak base current C basis-spitzenstrom i bm 200 ma peak emitter current C emitter-spitzenstrom - i em 200 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -55...+150c -55+150c characteristics (t j = 25c) kennwerte (t j = 25c) group a group b group c dc current gain C kollektor-basis-stromverh?ltnis 2 ) v ce = 5 v, i c = 10 a h fe typ. 90 typ. 150 typ. 270 v ce = 5 v, i c = 2 ma h fe 110 ... 220 200 ... 450 420 ... 800 v ce = 5 v, i c = 100 ma h fe typ. 120 typ. 200 typ. 400 h-parameters at/bei v ce = 5 v, i c = 2 ma, f = 1 khz small signal current gain kleinsignal-stromverst?rkung h fe typ. 220 typ. 330 typ. 600 input impedance C eingangs-impedanz h ie 1.6 ... 4.5 k 3.2 ...8.5 k 6 ... 15 k output admittance C ausgangs-leitwert h oe 18 < 30 s 30 < 60 s 60 < 110 s reverser voltage transfer ratio spannungsrckwirkung h re typ. 1.5*10 -4 typ. 2*10 -4 typ. 3*10 -4 1 valid, if leads are kept at ambient temperature at a distance of 2 mm from case gltig wenn die anschlussdr?hte in 2 mm abstand vom geh?use auf umgebungstemperatur gehalten werden ? diotec semiconductor ag http://www.diotec.com/ 1 2 x 1.27 c b e 4.6 0.1 4 . 6 0 . 1 m i n 1 2 . 5
bc546xbk ... BC549XBK characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. collector-emitter cutoff current C kollektor-emitter-reststrom v ce = 80 v, (b-e short) v ce = 50 v, (b-e short) v ce = 30 v, (b-e short) bc546 bc547 bc548 / bc549 i ces i ces i ces C C C 0.2 na 0.2 na 0.2 na 15 na 15 na 15 na v ce = 80 v, t j = 125c, (b-e short) v ce = 50 v, t j = 125c, (b-e short) v ce = 30 v, t j = 125c, (b-e short) bc546 bc547 bc548 / bc549 i ces i ces i ces C C C C C C 4 a 4 a 4 a collector-emitter saturation voltage C kollektor-emitters?ttigungsspg. 2 ) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v cesat v cesat C C 80 mv 200 mv 200 mv 600 mv base saturation voltage C basis-s?ttigungsspannung 2 ) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat v besat C C 700 mv 900 mv C C base-emitter-voltage C basis-emitter-spannung 2 ) v ce = 5 v, i c = 2 ma v ce = 5 v, i c = 10 ma v be v be 580 mv C 660 mv C 700 mv 720 mv gain-bandwidth product C transitfrequenz v ce = 5 v, i c = 10 ma, f = 100 mhz f t C 300 mhz C collector-base capacitance C kollektor-basis-kapazit?t v cb = 10 v, i e =i e = 0, f = 1 mhz c cbo C 3.5 pf 6 pf emitter-base capacitance C emitter-basis-kapazit?t v eb = 0.5 v, i c = i c = 0, f = 1 mhz c eb0 C 9 pf C noise figure C rauschzahl v ce = 5 v, i c = 200 a, r g = 2 k f = 1 khz, f = 200 hz bc546 / bc547 bc548 / bc549 f f C C 2 db 1.2 db 10 db 4 db thermal resistance junction to ambient air w?rmewiderstand sperrschicht C umgebende luft r tha < 200 k/w 1 ) recommended complementary pnp transistors empfohlene komplement?re pnp-transistoren bc556 ... bc559 available current gain groups per type lieferbare stromverst?rkungsgruppen pro typ bc546a bc547a bc548a bc546b bc547b bc548b bc549b bc547c bc548c bc549c 2 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% 1 valid, if leads are kept at ambient temperature at a distance of 2 mm from case gltig wenn die anschlussdr?hte in 2 mm abstand vom geh?use auf umgebungstemperatur gehalten werden 2 http://www.diotec.com/ ? diotec semiconductor ag


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